METHOD OF EVALUATING LIGHT EMISSION CHARACTERISTICS OF EPITAXIAL WAFER FOR LIGHT EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To obtain a correlation between the light emission intensity and brightness of a light emitting diode by means that an epitaxial diode for the light emitting diode has at least a light emitting layer located at a specified depth from the surface and surface layer formed on the light emitting layer having a smaller band gap than that of the light emitting layer, the small region has a specified circular shape, and trenches are at specified depth from the surface. ;SOLUTION: A small region 4 on the surface has a circular form with a diameter of 100-300 μm, and trenches 3 around the small region 4 are deeper by 3 μm or more than the depth of a light emitting layer 1 and at a depth of 20 μm or more from the surface, whereby a correlation can be obtd. between the light emission intensity measured in the state of an epitaxial wafer and brightness of a light emitting diode. This is because the small region is made circular at a diameter of 300 μm or less, the distance between the probe contact point in the small region and side the face of the trench is short, light picked up from the side face of the epitaxial layer facing the trench increases, and reflected light at the trench bottom face can be picked out as the trench depth is set to 20 μm or more.;COPYRIGHT: (C)1999,JPO