Light emitting diode vertical geometry with an active layer of Group III nitride and useful life increased.

摘要

A light-emitting diode (20) ISSUED AT THE VISIBLE SPECTRUM BLUE AND FEATURES A PROLONGED SHELF. THE LIGHT EMITTING DIODE COMPRISING CARBURO DE SILICIO SUBSTRATE CONDUCTOR (21); A ohmic contact (22) FOR CARBURO DE SILICIO SUBSTRATE; CONDUCTIVE a separating layer (23) on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A {SUB, SUB {X} B, 1- X} N, where A and B are Group III elements and where x is zero, one or a fraction between zero and one, and alloys CARBURO DE SILICIO WITH SUCH ternary Group III nitrides; And a double heterostructure (24) including a PN junction on the layer SEPARATOR IN WHICH THE LAYERS ACTIVAS (25) and layers of the heterostructure (26,27) are selected from the group consisting of Group III nitrides BITS AND GROUP III nitrides OF TERNARY.