Light emitting diode with an active layer of a group iii nitride compound, with a vertical geometry and a longer service life

• 1. 具有III族氮化物有源层和延长寿命的垂直几何结构的发光二极管 [P] . 中国专利： CN1096120C . 2002.12.11
• 2. 具有III族氮化物有源层和延长寿命的垂直几何结构的发光二极管 [P] . 中国专利： CN1166890A . 1997-12-03
• 3. VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME [P] . CA2200305C . 2003-06-17

  机译： 具有III类氮化物活性层和延长使用寿命的垂直几何发光二极管

• 4. Light emitting diode vertical geometry with an active layer of Group III nitride and useful life increased. [P] . ES2143077T3 . 2000-05-01

  机译： 具有III族氮化物活性层的发光二极管垂直几何形状和使用寿命增加。

• 5. VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME [P] . 欧洲知识产权局专利： EP0783768B1 . 2000-01-05

  机译： 具有III类氮化物活性层和延长使用寿命的垂直几何发光二极管

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• 3. Light Extraction Efficiency of Nanostructured III-Nitride Light-Emitting Diodes [D] . Ooi, Yu Kee. 2019
• 4. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, 2014
• 5. Layer-by-layer thermal conductivities of the Group III nitride films in blue/green light emitting diodes [O] . Su, Zonghui, Huang, Li, Liu, Fang, 2012

• 1. Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers [J] . Baiquan Liu ,Miao Xu ,Lei Wang . 安徽地质 . 2014,第004期
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• 3. Synthesis of New Binder Polymers for Photolithographic Patterning of Black Pixel Define Layers of Organic Light Emitting Diode [J] . Genggongwo Shi ,Kyeongha Baek ,Seon Hong Ahn . 材料科学与应用期刊（英文） . 2019,第11期
• 4. Enhancement of Performance of Organic Light Emitting Diodes by Using Ti- and Mo-Oxide Nano Hybrid Layers [J] . Nguyen Nang Dinh ,Do Ngoc Chung ,Tran Thi Thao . 材料科学与应用期刊（英文） . 2013,第4期
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