NONVOLATILE MEMORY HAVING CONTACTLESS ARRAY STRUCTURE WHICH CAN RESERVE SUFFICIENT ON CURRENT WITHOUT INCREASING RESISTANCE EVEN IF WIDTH OF BIT LINE IS REDUCED AND CREATION OF HYPERFINE STRUCTURE IS TRIED AND METHOD OF MANUFACTURING NONVOLATILE MEMORY

摘要

Non-volatile memory includes a semiconductor region 1 and the impurity diffusion layer 5 of the second conductivity type of the first conductivity type. The second conductive type of the impurity diffusion layer (5) is in a predetermined region of the semiconductor region 1 and the first conductivity type is formed by doping the impurity of the other second conductivity type. The impurity diffusion layer 5 is used as a bit line. The impurity diffusion layer (5) and has a specific layer than the impurity concentration is substantially 1 × 10 ¹⁸ ㎝ ^-3, A is the diffusion length, B is the thickness of a specific layer in the depth direction in the transverse direction from the predetermined area B