Nonvolatile memory having contactless array structure which can reserve sufficient on current, without increasing resistance, even if width of bit line is reduced and creation of hyperfine structure is tried, and method of manufacturing nonvolatile memory

摘要

A nonvolatile memory includes a first conductive type of semiconductor region and a second conductive type of impurity diffusion layer. The impurity diffusion layer is formed by doping into a predetermined region of the semiconductor region, impurity of the second conductive type that differs from the first conductive type. The impurity diffusion layer is used as a bit line. The impurity diffusion layer has a specific layer in which an impurity density is substantially equal to or higher than 1×10¹⁸ cm^−3, and wherein BA where A is a diffusion length in a lateral direction from the predetermined region and B is a thickness of the specific layer in a depth direction.