DOUBLE FILM SILICON DEVICE WITHOUT FLOATING BODY EFFECT

摘要

PURPOSE: The device is made to remove the floating body effect by controlling the potential in the channel region by forming a metal electrode on the back surface of a double film silicon wafer and applying a constant voltage to the metal electrode. CONSTITUTION: The device comprises: a silicon substrate(9); a buried insulation film(8) formed on the silicon substrate; a top silicon layer(6) located on top of the buried insulation film; a field oxide(4) which is formed on a region of the top silicon layer and whose bottom part is contacted with the buried insulation film; and a metal layer(11) formed on the back surface of the silicon substrate.