PREPARATION METHOD OF SEMICONDUCTOR MEMORY DEVICE HAVING HIGH ELECTRIC PROPERTY AND RELIABILITY

摘要

PURPOSE: A method is provided to obtain a strong dielectric capacitor having excellent electric property and high reliability by performing high thermal treatment at the ambient of containing oxide after processing a lower electrode and forming an oxide barrier layer and by preventing the expansion and condensation. CONSTITUTION: A transistor is formed on a substrate(1), and an interlayer insulating film(6) is formed on the transistor. Then, a contact plug(7) is formed in the interlayer insulating film. And, a lower electrode film(9), a strong dielectric film(10) as an insulating film, and an upper electrode film(11) are formed on the interlayer insulating film including the contact plug. Then, a capacitor is formed by sequentially patterning the upper electrode film, the strong dielectric film, and the upper electrode film. The transistor is electrically interconnected to the capacitor by using the contact plug, and an oxide barrier(12) is formed on the capacitor for the capacitor to cover the oxide barrier. Then, a thermal treatment is performed at an oxide containing atmosphere for obtaining a strong dielectric capacitor.