SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF CAPABLE OF PROVIDING IMPROVED ELECTRICAL PROPERTY AND RELIABILITY

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to obtain improved electrical property and reliability by selectively forming an insulation layer on one surface of a semiconductor substrate at low costs with a simple process.;CONSTITUTION: A substrate(10) having a first surface(11) and a second surface is prepared. A passivation layer(15) for exposing a part of a pad(14) is formed on the first surface of the substrate. A via hole(16) is formed to expose at least a part of the substrate from the first surface. A via hole insulation layer(22) is formed on a side wall of the via hole. A through-electrode(20) is formed in the via hole. The through-electrode comprises a barrier layer(24) and a conductive connection part(26).;COPYRIGHT KIPO 2012