METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE AND STRUCTURE OF CONTACT HOLE

摘要

Purpose: a kind of method is used to form a contact hole of semiconductor device and a structure setting of a contact hole at the excessive erosion agent for preventing a layer insulation, by forming an etch barrier in the region for being used to form a contact hole. Construction: a kind of method, the contact hole for being used to form semiconductor device include the following steps:: the insulating layer (104) and the first layer insulation (102) of the first conduction are formed on semi-conductive substrate (100); An etch barrier (108) are formed, are used to prevent the corrosive agent of the first layer insulation on a top of the first layer insulation; A conductive layer (112) and the second layer insulation (106) are formed on a top of etch barrier and etch an area form with etch barrier. One structure of one contact hole includes an etch barrier, is used to prevent the excessive erosion agent an of layer insulation.