首页> 外国专利> THIN FILM TRANSISTOR OF LIQUID CRYSTAL DISPLAY ELEMENT

THIN FILM TRANSISTOR OF LIQUID CRYSTAL DISPLAY ELEMENT

机译:液晶显示元件的薄膜晶体管

摘要

PURPOSE: A TFT liquid crystal is provided to reduce the flicker phenomena by overlapping the point of the source electrode and the drain electrode on the etch stopper which leads to the lowering of the kick back voltage and the Cgs. CONSTITUTION: A device comprises a gate bus line(10), a round projection part(11), an active line(20), a projection part(21), a round etch stopper(30), a pixel(40), a source electrode(50), and a drain electrode(60).The gate bus line extends to certain direction on the insulation substrate. The gate insulation layer is formed on the upper part of the whole gate bus line structure. The etch stopper is formed on the upper part of a certain part of the gate bus line. The active line is arranged to surround the etch stopper and formed to cover the gate bus line area in which the etch stopper is formed. The source electrode and the drain electrode are formed to overlap the active line and the etch stopper, the point area of the two electrodes overlaps the etch stopper and source electrode and the drain electrode are formed in a triangle shape corresponding to both sides of the etch stopper.
机译:用途:提供一种TFT液晶,通过在蚀刻停止层上重叠源电极和漏电极的点来减少闪烁现象,从而降低反冲电压和Cgs。组成:一种装置,包括栅极总线(10),圆形投影部分(11),有源线(20),投影部分(21),圆形蚀刻停止层(30),像素(40),源电极(50)和漏电极(60)。栅极总线在绝缘基板上向特定方向延伸。栅极绝缘层形成在整个栅极总线结构的上部。蚀刻停止层形成在栅极总线的特定部分的上部。有源线被布置为围绕蚀刻停止层并且形成为覆盖其中形成蚀刻停止层的栅极总线区域。源电极和漏电极形成为与有源线和蚀刻停止层重叠,两个电极的点区域与蚀刻停止层重叠,并且源电极和漏极形成为与蚀刻的两侧相对应的三角形形状。塞子。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号