METHOD FOR MEASURING CRITICAL DIMENSION AND OVERLAPPING DEGREE

摘要

PURPOSE: A method for measuring the critical dimension and overlapping degree is provided to increase the productivity of articles by reducing the time for measuring the overlapping degree. CONSTITUTION: A wafer is positioned on a critical dimension measuring position. The critical dimension of patterns formed on the wafer is measured. At the same time, an overlapping measuring position of the wafer is calculated based on the predetermined reticle information. The information regarding to the critical dimension is stored. Then, the wafer is moved to the overlapping measuring position. After measuring the overlapping degree of the patterns formed on the wafer, the information regarding to the overlapping is stored. The stored information of the critical dimension and the overlapping of patterns are displayed.