RECESS TYPE TRANSISTOR AND FABRICATING METHOD THEREOF FOR OVERCOMING RESTRICTION SUCH AS CRITICAL DIMENSION OF GATE STACK LARGER THAN OPEN CRITICAL DIMENSION OF TRENCH BY OVERLAPPING GATE STACK ON GROWN SILICON

摘要

PURPOSE: A recess type transistor and a fabricating method thereof are provided to overcome a restriction such as a critical dimension of a gate stack larger than an open critical dimension of a trench by overlapping a gate stack on grown silicon. CONSTITUTION: A semiconductor substrate(52) has an active region defined by an isolation layer. One or more trench(60) is formed on the active region. A grown silicon layer(64) is formed along an inner face of the trench. A gate insulating layer is formed on the grown silicon layer within the trench and on the active region. A gate electrode(68) is formed on the gate insulating layer. A top side is larger than a bottom side in the gate electrode. An impurity region(78) is formed on the active region corresponding to both sides of the gate electrode.