Semiconductor structure for measuring critical dimensions and overlay accuracy, has substrate provided with two different periodic patterns with overlap indicating overlay error

摘要

The semiconductor structure (100) has a substrate (101) provided with 2 periodic patterns (102,110) each having 2 different periodicities in 2 perpendicular directions, the periodic patterns overlapping for providing an overlap region in one direction identifying the overlay error in this direction and an overlap region in the perpendicular direction identifying the overlay error in the second direction. An Independent claim for a method for measuring overlay error during manufacture of a semiconductor structure is also included.