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Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors

机译:按照国家半导体技术路线图的规定,测量关键尺寸和覆盖层

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Abstract: Continued demands on shrinking features with tighter tolerance on critical dimensions (CDs) and overlays (OL) are placing stringent requirements on parameters that are essentially the building blocks of the metrologies for CDs and overlays. This paper conducts a reality check on the precision and error budgets assigned to CD and overlay controls by the National Technology Roadmap for Semiconductors (NTRS) in light of constraints on parameters that are fundamental to the above measurements. !3
机译:摘要:对收缩特征的持续要求以及对关键尺寸(CD)和覆盖层(OL)的更严格的公差,对参数提出了严格的要求,这些参数本质上是CD和覆盖层计量学的基础。本文针对上述测量基础的参数约束,对国家半导体技术路线图(NTRS)分配给CD和覆盖控件的精度和错误预算进行了实际检查。 !3

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