METHOD OF FORMATION OF METALLIZATION FILM FOR ANTI-CORROSION IN DRY ETCHING OF AL AND ALCU FILM

摘要

The present invention relates to a method for forming a metal wiring thin film, and more particularly, to a metal wiring thin film capable of preventing corrosion when dry etching aluminum (Al) and aluminum / copper (AlCu) thin films used as metal wiring thin films for semiconductor devices And a method of forming the same. The method for forming a metal wiring thin film according to the present invention is a method for forming a metal wiring thin film on a semiconductor substrate 1 by metal organic chemical vapor deposition (MOCVD) The present invention is characterized in that after the dry etching of the metal wiring thin film, the sectional shape of the metal wiring 5a is different from that of the prior art, and even after the dry etching, Since the wiring 5a is not corroded at all, it has an effect of suppressing the electro-migration phenomenon of the metal thin film and has an excellent effect on the electrical reliability of the wiring.