By providing between the surface of the substrate and the photoresist layer, the adverse effects caused by the reflected light from the substrate surface are reduced, and patterned exposure of the photoresist layer to ultraviolet light is performed without undesirable phenomenon of intermixing and notching between the layers, In addition, an object of the present invention is to provide a novel base composition for forming a base layer having a large selectivity in etching rate between the patterned resist layer and the base layer during the dry etching process, wherein the following composition of the present invention comprises (A) at least one UV absorbers which are benzophenone compounds having an unsubstituted or alkyl-substituted amino group on an aryl group, and (B) a crosslinking agent which is a melamine compound preferably having at least two methylol groups or alkoxymethyl groups bonded to a nitrogen atom in the molecule, It is contained so that the weight ratio of (A) :( B) may be 1: 1-1: 10.
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