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LATERAL SOI BIPOLAR MOS FIELD EFFECT TRANSISTOR HAVING TRENCH GATE AND METHOD OF FABRICATING THE SAME
LATERAL SOI BIPOLAR MOS FIELD EFFECT TRANSISTOR HAVING TRENCH GATE AND METHOD OF FABRICATING THE SAME
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机译:具有沟槽门的横向SOI双极MOS场效应晶体管及其制造方法
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摘要
PURPOSE: A horizontal-type SOI bipolar mode FET having a trench gate and a method for making the same are provided to achieve an enhanced electric characteristic, reduce a change of an element characteristic as well as an influence of a buried oxide layer. CONSTITUTION: A first conductive source area(40) is separated from a first conductive drain area(41), and they have a predetermined depth. A second conductive gate area is near to one area between the source and drain areas(40,41), insulates a gate plug deeper than the areas, and is contacted with a lower part of the trench. If the first conductive area is made of N-type impurity ion, the second conductive area is made of P-type ion. The gate plug is nearer to the source area, and is made of a polysilicon.
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