首页> 外国专利> Wafer wet treatment before the direction and a process for treating a wafer in a wafer wet treatment before the direction of

Wafer wet treatment before the direction and a process for treating a wafer in a wafer wet treatment before the direction of

机译:方向之前的晶片湿处理以及在方向之前的晶片湿处理中的晶片处理方法

摘要

A wafer wet treatment apparatus has an external bath (41) which is connected to a first supply/discharge line (41-2) and which contains an internal bath (50) connected to a second supply/discharge line (55), one or more partitions (43-45) being arranged on a section (52) of the internal bath (50). Preferably, the first line (41-2) acts as a supply line for the external bath when the second line (55) acts as a discharge line for the internal bath and vice-versa. Also claimed are processes for treating a wafer in the above apparatus, involving either (i) supplying a first solution through the supply line (41-2) and the external bath (41) to the internal bath (50), draining the first solution from the internal bath (50) through the discharge line (55), removing the or each partition (43-45) from the internal bath (50), supplying a second solution through the supply line (41-2) to the internal bath (50) and draining the second solution through the discharge line (55); or supplying a first solution through the supply line (55) to the internal bath (50), allowing the first solution to overflow into the external bath (41), draining the first solution from the external bath (41) through the discharge line (41-2), removing the or each partition (43-45) from the internal bath (50) and supplying a second solution to the internal bath (50).
机译:晶片湿式处理设备具有外部槽(41),该外部槽连接到第一供应/排出管线(41-2),并且包含内部槽(50),该内部槽连接到第二供应/排出管线(55),一个或一个。在内部槽(50)的部分(52)上布置更多的隔板(43-45)。优选地,当第二管线(55)用作内部浴的排出管线时,第一管线(41-2)用作外部浴的供给管线,反之亦然。还要求保护在上述设备中处理晶片的方法,该方法包括(i)通过供应管线(41-2)和外部槽(41)将第一溶液供应到内部槽(50),将第一溶液排干。从内部浴槽(50)通过排放管线(55)从内部浴槽(50)上除去隔板或每个隔板(43-45),通过供应管线(41-2)向内部浴槽供应第二溶液(50)并通过排出管线(55)排出第二溶液;或通过供应管线(55)向内部浴槽(50)供应第一溶液,使第一溶液溢出到外部浴槽(41)中,并通过排放管线从外部浴槽(41)排出第一溶液( 41-2),从内部浴槽(50)上卸下隔板或每个隔板(43-45),然后向内部浴槽(50)提供第二种溶液。

著录项

  • 公开/公告号DE19733875C2

    专利类型

  • 公开/公告日2000-03-23

    原文格式PDF

  • 申请/专利权人 LG SEMICON CO. LTD. CHEONGJU KR;

    申请/专利号DE1997133875

  • 发明设计人 HAN SUK-BIN CHEONGJU KR;

    申请日1997-08-05

  • 分类号H01L21/302;H01L21/306;B08B3/08;

  • 国家 DE

  • 入库时间 2022-08-22 01:42:55

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号