Microelectronic structure, especially the bottom electrode of a ferroelectric memory storage capacitor, has a sputtered oxygen-containing iridium layer between a silicon-containing layer and an oxygen barrier layer

摘要

A microelectronic structure, has a sputtered oxygen-containing iridium layer (25) between a silicon-containing layer (8, 20) and an oxygen barrier layer (30). A microelectronic structure has an oxygen-containing iridium layer (25) formed between a silicon-containing layer (8, 20) and an oxygen barrier layer (30) by sputter deposition in an atmosphere containing 2.5-15 vol.% oxygen. An Independent claim is also included for production of the above microelectronic structure.