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light-emitting diode with an active layer of a nitridverbindung group iii, with vertical geometry and long lifespan
light-emitting diode with an active layer of a nitridverbindung group iii, with vertical geometry and long lifespan
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机译:带有氮化verb第Ⅲ族活性层的发光二极管,具有垂直几何形状和长寿命
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摘要
A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula AxB1-xN, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
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