Crystal growth from a melt, especially for growing large silicon carbide or aluminum nitride crystals useful for large power electronic components, comprises lateral growth from grown crystal tips of the material on a substrate

摘要

Crystalline material growth from a melt, involves lateral growth from grown crystal tips of the material (100) on a substrate. Crystalline material growth from a melt onto a solid first material (100) comprises: (a) growing the first material (100) on a substrate of a second material (200); (b) growing crystal tips of the first material (100) from the interface between the first material (100) and the me and (c) growing crystals from the tips in the lateral direction in a plane parallel to the free surface of the melt. Preferred Features: The tips are grown under a temperature gradient and lateral growth is initiated by reversing the direction of the temperature gradient.