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Fast SRAM design using embedded sense amps
Fast SRAM design using embedded sense amps
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机译:使用嵌入式感应放大器的快速SRAM设计
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摘要
The speed of large SRAMs is improved by embedding sense amplifiers into the SRAM core. In this way, the bit line length that the SRAM cells must drive is very short and, thus, the slew rate is fast. An additional layer of metal is employed to route and accumulate the sense amp results vertically over the entire SRAM core. To reduce the required pitch of the additional metal layers, a sense amp muxing scheme is also provided.
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