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Bandgap reference voltage circuit with PTAT current source

机译:带PTAT电流源的带隙基准电压电路

摘要

A bandgap reference circuit capable of operating at low voltage provides an adjustable bandgap reference voltage. The bandgap reference circuit includes a proportional to absolute temperature (PTAT) current source, a bias current source, two resistors and a transistor. The base of the transistor couples to the IPTAT current source and the emitter of the transistor couples to the bias current source. The bandgap reference circuit also includes two resistors. The first resistor couples between the emitter and the base of the transistor, and the second resistor couples to the base of the transistor. The first resistor receives a portion of the bias current and provides a current proportional to a base- emitter voltage of the transistor. The second resistor receives the PTAT current and the current proportional to the base-emitter voltage of the transistor and provides a reference voltage which remains substantially constant over temperature and which is proportional to a silicon bandgap voltage. The ratio of the first and second resistors determines the proportionality of the reference voltage to the silicon bandgap voltage. Thus, by adjusting the ratio of the two resistors a reference voltage less than the silicon bandgap voltage can be obtained.
机译:能够在低压下工作的带隙基准电压电路可提供可调的带隙基准电压。带隙基准电路包括一个与绝对温度成正比的电流源(PTAT),一个偏置电流源,两个电阻器和一个晶体管。晶体管的基极耦合到IPTAT电流源,晶体管的发射极耦合到偏置电流源。带隙基准电路还包括两个电阻器。第一电阻器耦合在晶体管的发射极与基极之间,第二电阻器耦合至晶体管的基极。第一电阻器接收一部分偏置电流,并提供与晶体管的基极-发射极电压成比例的电流。第二电阻器接收PTAT电流和与晶体管的基极-发射极电压成比例的电流,并提供一个基准电压,该基准电压在整个温度范围内基本保持恒定,并且与硅带隙电压成比例。第一和第二电阻器的比率确定参考电压与硅带隙电压的比例。因此,通过调节两个电阻器的比率,可以获得小于硅带隙电压的参考电压。

著录项

  • 公开/公告号US6016051A

    专利类型

  • 公开/公告日2000-01-18

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号US19980163806

  • 发明设计人 SUMER CAN;

    申请日1998-09-30

  • 分类号G05F3/16;

  • 国家 US

  • 入库时间 2022-08-22 01:38:13

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