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Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects
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机译:金属化堆叠结构,可改善电迁移电阻并保持ULSI互连的低电阻率
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摘要
There is provided an improved metallization stack structure so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.
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