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Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
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机译：具有用于高功率应用的发射极的微波异质结双极晶体管及其制造方法
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摘要
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Al.sub.x Ga.sub.1-x As, where x 0.4, abutting a base layer 8.
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机译：在本发明的一种形式中，公开了一种用于双极晶体管的发射极结构。该结构由Al x Ga 1-x As的发射极层6组成，其中x> 0.4，与基极层8邻接。
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