Semiconductor device with alternating general-purpose functional regions and specific functional regions

摘要

When constructing a number of transistors in transistor forming region (1) on a semiconductor substrate, a plurality of specific functional regions and a plurality of general-purpose functional regions are formed in the transistor forming region (1) in such a way that each of the plurality of specific functional regions alternates with each of the plurality of general-purpose functional regions. Each of the plurality of general-purpose functional regions is comprised of at least one general- purpose functional bank (4) including a row of P-channel field-effect transistors and a row of N-channel field-effect transistors. Each of the plurality of specific functional regions is comprised of at least one specific functional bank (5) including a row of functional blocks (6) each of which can perform a specific function.