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Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing
Method for forming shallow junctions in semiconductor wafers using controlled, low level oxygen ambients during annealing
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机译:在退火期间使用受控的低氧环境在半导体晶圆中形成浅结的方法
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摘要
A method is provided for forming a shallow junction in a semiconductor wafer that has been implanted with a dopant material. The dopant material is activated by thermal processing of the semiconductor wafer in a thermal processing chamber at a selected temperature for a selected time. The oxygen concentration in the thermal processing chamber during activation of the dopant material is controlled at or near a selected level less than a background level that is typically present when the thermal processing chamber is filled with a process gas. The oxygen concentration may be controlled at or near a selected level in a range less than 1000 parts per million and is preferably controlled at or near a selected level in a range of about 30-300 parts per million. The method is particularly useful for implanted boron or BF.sub.2 ions, but may be used for any dopant material.
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