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Chemical amplification photoresist comprising a reverse reaction inhibitor

机译:包含逆反应抑制剂的化学放大光刻胶

摘要

The inhibition of reverse reactions of a protecting group elimination reaction, to thereby increase the dissolution contrast and resolution, is considered. The disclosed chemical amplification photoresist includes a base resin which is insoluble in a basic developer in the state in which a protecting group is attached to a predetermined site thereof but is soluble in the basic developer in the state in which the protecting group is eliminated therefrom, a photochemical acid generator which generates a hydrogen ion upon exposure to light, and a reverse reaction inhibitor. The reaction of a hydrogen ion generated by the photochemical acid generator with the base resin eliminates the protecting group, which renders the base resin soluble in the basic developer, with concomitant generation of a new hydrogen ion, so that solubilization of the photoresist in the basic developer is amplified. The reverse reaction inhibitor inhibits recombination of the eliminated protecting group with the base resin.
机译:考虑到抑制保护基消除反应的逆反应,从而增加溶解对比度和分辨率。所公开的化学放大光致抗蚀剂包括基础树脂,该基础树脂在保护基附接到其预定位置的状态下不溶于碱性显影剂,但是在其中从中去除保护基的状态下可溶于碱性显影剂,光化学产酸剂和逆反应抑制剂,所述光化学产酸剂在曝光时会产生氢离子。由光化学产酸剂产生的氢离子与基础树脂的反应消除了保护基团,该保护基团使基础树脂可溶于碱性显影剂中,并同时产生新的氢离子,从而使光刻胶在碱性树脂中增溶显影剂被放大。逆反应抑制剂抑制除去的保护基与基础树脂的复合。

著录项

  • 公开/公告号US6090522A

    专利类型

  • 公开/公告日2000-07-18

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号US19990332729

  • 发明设计人 MITSUHARU YAMANA;

    申请日1999-06-14

  • 分类号G03F7/039;

  • 国家 US

  • 入库时间 2022-08-22 01:36:39

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