首页> 外国专利> High integrity borderless vias with HSQ gap filled patterned conductive layers

High integrity borderless vias with HSQ gap filled patterned conductive layers

机译:具有HSQ间隙填充的图案化导电层的高完整性无边界过孔

摘要

Borderless vias are formed in electrical connection with a lower metal feature of a metal pattern gap filled with HSQ. Heat treatment in an inert atmosphere is conducted before filling the through- hole to outgas water absorbed during solvent cleaning of the through-hole, thereby reducing via void formation and improving via integrity.
机译:与填充有HSQ的金属图案间隙的下部金属部件电连接形成无边界通孔。在填充通孔之前进行惰性气氛中的热处理,以除掉在通孔的溶剂清洁期间吸收的水,从而减少通孔的形成并改善通孔的完整性。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号