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Anisotropic chemical etching process of silicon oxide in the manufacture of MOS transistor flash EPROM devices
Anisotropic chemical etching process of silicon oxide in the manufacture of MOS transistor flash EPROM devices
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机译:MOS晶体管Flash EPROM器件制造中氧化硅的各向异性化学刻蚀工艺
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摘要
This invention relates to an improvement to an anisotropic chemical etching process for silicon oxide and to a manufacturing process for silicon FAMOS transistor Flash EPROM memory devices including said improvement, said silicon oxide chemical etching process having an etching direction and being characterised in that the following steps are performed:PPpreliminary deposition of a layer of silicon nitride on the silicon oxide,PPa first anisotropic chemical etching or break-through stage, along said etching direction, aimed at removing the nitride layer from the silicon oxide surfaces orthogonal to said etching direction;PPa second anisotropic chemical etching stage along said etching direction, aimed at removing the silicon oxide surfaces orthogonal to said etching direction.
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