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High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
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机译:包含钽的高介电常数材料,形成包含钽的高介电常数膜的方法以及使用该材料的半导体器件
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摘要
A high dielectric constant material containing tantalum expressed by chemical formula Ta.sub.x O.sub.y N.sub.z, where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using Cp.sub.m Ta(N. sub. 3).sub.n, where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum- containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.
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机译:一种高钽介电常数材料,含钽,化学式为Tax Oy Nz,其中x,y和z均为总产率为1的值,z为0.1或更高,但0.625以下,y为0以上0.6以下,并且合计0.4y和0.6z等于x以下的值,并且涉及使用Cp通过化学气相沉积来沉积材料膜的方法。 Ta(N.sub.3)n,其中Cp代表环戊烷,m + n = 5,或使用气态含钽有机金属化合物,或通过包括在含氮气体下进行等离子体处理的方法。还要求保护的半导体器件和使用包含钽的高介电膜的MOS晶体管。
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