Fabrication method of a tantalum pentoxide dielectric layer for a DRAM capacitor

摘要

A method of fabricating a dielectric layer for a dynamic random access memory capacitor is described in which a tantalum pentoxide layer is deposited on the polysilicon storage electrode, followed by a two- step treatment on the tantalum pentoxide layer. The first treatment step includes a remote oxygen plasma or an ultraviolet-ozone treatment, followed by a spike annealing second treatment step.