Method of forming semiconductor devices using gate electrode dimensions and dopant concentration for controlling drive current strength

摘要

A semiconductor device having a controlled drive current strength is produced by varying dopant concentration to accommodate any variation in channel length, which is affected by variations in gate electrode dimension(s) from a desired value. After formation of the gate electrode on a substrate, its dimension(s) is measured and compared to a desired value. Based on any differences between the measured and desired values, the concentration of dopant implanted into the substrate is determined in order to counteract the variation in gate electrode dimension. This results in a change in dopant concentration that counteracts the effect of the variation in gate electrode dimension on the drive current strength. The present process provides enhanced control over the drive current strength of semiconductor devices and provides decreased variation within and between lots and corresponding increases in productivity.