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Process utilizing selective TED effect when forming devices with shallow junctions
Process utilizing selective TED effect when forming devices with shallow junctions
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机译:形成具有浅结的器件时利用选择性TED效应的工艺
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摘要
A process for device fabrication in which transient enhanced diffusion (TED) is used to obtain a desired distribution of dopants in a crystalline substrate is disclosed. In the process, at least two dopants and a non-dopant are introduced into the same region of a substrate. The diffusion of the dopants in the substrate during a subsequent thermal anneal is affected by the non-dopant. The amount of non-dopant introduced into the substrate is selected to obtain, in conjunction with the subsequent thermal anneal, the desired distribution of dopants in the substrate. The concentration of the non-dopant is in the range of about 6. times.10.sup.16 atoms/cm.sup.3 to about 3×10.sup.21 atoms/cm.sup.3. The substrate is then annealed at a temperature in the range of about 700. degree. C. to about 950° C. to obtain the desired dopant profile.
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机译:公开了一种用于器件制造的方法,其中使用瞬态增强扩散(TED)来获得期望的掺杂剂在晶体衬底中的分布。在该过程中,将至少两种掺杂剂和非掺杂剂引入到衬底的相同区域中。在随后的热退火期间,掺杂剂在衬底中的扩散受到非掺杂剂的影响。选择引入衬底中的非掺杂剂的量,以结合随后的热退火获得衬底中所需的掺杂剂分布。非掺杂剂的浓度在约6×10×16原子/ cm 3到约3×10×21原子/ cm 3的范围内。然后在约700度范围内的温度下对衬底进行退火。约950℃。 C.获得所需的掺杂剂分布。
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