DRAM and SRAM memory cells with repressed memory

摘要

The transfer device of a typical DRAM cell is replaced with a transistor having an additional gate. The unique cell can be accessed as a typical DRAM cell by reading from or writing to a storage capacitor or as a nonvolatile memory by storing charges on the additional gate. Thus, a DRAM cell having a nonvolatile memory component within its cell is formed in a simple and cost effective manner. Transistors in a typical SRAM cell are also replaced by the transistors with the additional gate to form a SRAM cell having a nonvolatile component built within its cell.