Abrasives and grinding manner null for semiconductor silicon wafer grinding

摘要

PROBLEM TO BE SOLVED: To provide an abrasive used to polish semiconductor silicon wafers, the main ingredient of which is a silica-containing abrasive, and which does not require cost-consuming pure abrasive and does not cause metal contamination during the polishing process, by controlling the concentration of copper and of nickel in the total amount of the abrasive to a specified value for each, respectively. ;SOLUTION: A silica-containing abrasive having copper and nickel concentrations in the abrasive are 0.01-1 ppb, respectively, is used. Evaluation of polished sample wafers is performed by thermally processing the sample wafers after making a specified treatment on the polished surface of the polished wafers to collect the copper and the nickel that have been diffused to the inside of each wafer to the surface, and subsequently decomposing the thermal oxide film on the polished surface in vapor phase to analyze the composition with a specified method. In this way, overall contamination levels in the wafers are evaluated. The result indicates that the contamination level of copper and of nickel in the polished wafers are suppressed to those of an etched wafer CW, by controlling the copper and the nickel concentrations in the abrasive to lower than 1 ppb.;COPYRIGHT: (C)1999,JPO