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Poly entry poly output switch circuits

机译:多晶硅输入多晶硅输出开关电路

摘要

PURPOSE: To improve an isolation value being the ratio of a main signal to a leaked signal in the multi-input multi-output switch circuit formed on a common substrate. ;CONSTITUTION: A multi-input multi-output switch circuit 200 is formed on a common semiconductor substrate 101 by the semiconductor manufacture process, has plural one-input multi-output switches 10, 11 to connect signals inputted from an input terminal to plural paths and multi-input one-output switches 20, 21 switching a signal connected to plural paths by the switches 10, 11 to each output terminal, and a shield 100 consisting of a semiconductor region of an opposite conduction type (n channel or p channel) to the conduction type (p channel or n channel) of the substrate is arranged between the one-input multi-output switches and the multi-input one-output switches or between the adjacent one-input multi-output switches 10, 11 and the adjacent multi-input one-output switches 20, 21.;COPYRIGHT: (C)1997,JPO
机译:用途:为了提高隔离值,即在公共基板上形成的多输入多输出开关电路中主信号与泄漏信号之比。 ;构成:多输入多输出开关电路200通过半导体制造工艺形成在公共半导体基板101上,具有多个单输入多输出开关10、11,以将从输入端子输入的信号连接到多条路径多输入一输出开关20、21将通过开关10、11连接到多条路径的信号切换到每个输出端子,以及由相反导电类型的半导体区域(n沟道或p沟道)构成的屏蔽件100在单输入多输出开关与多输入单输出开关之间或相邻的单输入多输出开关10、11与相邻的单输入多输出开关之间布置基板的导电类型(p沟道或n沟道)。相邻的多输入一输出开关20、21;版权:(C)1997,JPO

著录项

  • 公开/公告号JP3177876B2

    专利类型

  • 公开/公告日2001-06-18

    原文格式PDF

  • 申请/专利权人 日本電信電話株式会社;

    申请/专利号JP19950177989

  • 发明设计人 市川 敬章;小笠原 守;

    申请日1995-06-22

  • 分类号H04Q3/52;

  • 国家 JP

  • 入库时间 2022-08-22 01:34:40

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