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n-TYPE DIAMOND ELECTRON EMISSIVE ELEMENT AND ELECTRONIC DEVICE

机译:n型金刚石电子发射元件和电子设备

摘要

PROBLEM TO BE SOLVED: To provide a superior n-type diamond electron emitting element and an electronic device capable of being constructed thin and flat, having a smaller threshold voltage for electron emission, and allowing effective use of the negative electron affinity force of diamond. ;SOLUTION: An n-type diamond electron emitting element includes a high- vacuum vessel 9, which is equipped internally with an n-type diamond semiconductor 4 formed on a board 2, a surface 6 in NEA state formed by hydrogenating the surface of the diamond semiconductor, so that a hydrogenated surface is generated, an anode electrode 7 provided in the neighborhood of the mentioned surface, and a cathode electrode 8 formed on the partial surface of the n-type diamond semiconductor, whereby voltage is impressed using the semiconductor as cold cathode so that electrons are emitted.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种优异的n型金刚石电子发射元件和电子设备,其能够被构造成薄且平坦的,具有较小的电子发射阈值电压,并允许有效地利用金刚石的负电子亲和力。 ;解决方案:n型金刚石电子发射元件包括一个高真空容器9,该容器内部装有在板2上形成的n型金刚石半导体4,并通过氢化镍的表面形成NEA状态的表面6。金刚石半导体,从而产生氢化表面,在所述表面附近提供阳极7,并在n型金刚石半导体的部分表面上形成阴极8,从而使用该半导体施加电压。冷阴极,使电子得以发射。;版权所有:(C)2001,日本特许厅

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