Long wave long band surface-emitting type semiconductor laser and its production manner

摘要

PROBLEM TO BE SOLVED: To confine electrons excellently even at a high temperature and to reduce deterioration of characteristics, by forming an active layer of a semiconductor layer not lattice-matched with both InP and GaAs, and increasing discontinuous energy of conduction bands of a clad layer and a quantum well active layer. ;SOLUTION: An N-type GaAs/AlAs multilayer-film reflecting mirror 2 is laminated on an N-type GaAs substrate 1, and an ion implantation region 3 forming current constriction structure is formed. A GaAs thin-film layer 4 is bonded with the reflecting mirror 2, and an N-type clad layer 5, a quantum well active layer 6 and a P-type clad layer 7 are laminated on the thin-film layer 4. A P-type GaAs/AlAs multilayer reflecting mirror 8 is bonded with the clad layer 7, and has a P-type electrode 9. Laser beams are emitted from the rear of the substrate 1. The N-type and P-type clad layers 5, 7 and a light- emitting active layer 6 are formed of a material not lattice-matched with both InP and GaAs. In such structure, discontinuous energy of the conduction bands of the clad layers and a quantum well layer is increased.;COPYRIGHT: (C)1999,JPO