RAW MATERIAL FOR THIN FILM OF PEROVSKITE-TYPE COMPLEX OXIDE (SUCH AS A3+2B+B5+O6, A2+2B3+B5+O6 AND A2+3B2+B5+2O 9), AND METHOD FOR GROWING THE OXIDE

摘要

PROBLEM TO BE SOLVED: To provide a raw material capable of strictly controlling the compositional ratio of perovskite-type complex oxide which is a complex compd. being a three-dimensional compd. ;SOLUTION: This BB'-double metal alkoxide (B=B+, B'=B5+; B=B3+, B'=B5+; B=B2+, B'B=B5+) raw material is used for organometallic vapor growth of a perovskite-type complex oxide thin film contg. plural metallic elements on the B site of perovskite structure ABO3, where BB'-double metal alkoxide is composed of BB'(O-X)6 [B=Li, Na, K; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B+, B'=B5+, of BB'(O-X)8 [B=Al, Ga; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9] in the case of B=B3+, B'=B5+, and of B[B'(O-X)6]2 [B=Mg, Ca, Sr, Ba; B'=Nb, Ta; X=CH3, C2H5, iC3H7, tC4H9].;COPYRIGHT: (C)2001,JPO