METHOD OF MANUFACTURING EXCHANGE COUPLING FILM, METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT DEVICE BY USE OF EXCHANGE COUPLING FILM, AND METHOD OF MANUFACTURING THIN FILM MAGNETIC HEAD BY USE OF MAGNETORESISTIVE EFFECT DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem in which a magnetoresistive effect device of conventional structure cannot be enhanced in resistance change rate. ;SOLUTION: In a film forming stage (before thermal treatment), a seed layer 22 is provided on the surface of an antiferromagnetic layer 4 opposite to its other surface coming into contact with a stationary magnetic layer 3. The seed layer 22 is primarily face-centered cubic in crystal structure, and as to its crystal orientation, crystals are preferentially oriented in a (111) direction. It is preferable that the seed layer 22 is non-magnetic. By this setup, the crystal orientation of layers including the antiferromagnetic layer 4 to a free magnetic layer 1 is preferentially a (111) plane, the layers become large in crystal grain diameter, and a magnetoresistive effect device of this constitution can be enhanced in resistance change rate.;COPYRIGHT: (C)2001,JPO