首页> 外国专利> BISMUTH-TUNGSTEN-COBALT OXIDE-BASED AND BISMUTH- TUNGSTEN-NIOBIUM OXIDE-BASED SOLID SOLUTIONS FOR OXIDE ION CONDUCTOR, AND METHOD FOR PRODUCING THE SAME

BISMUTH-TUNGSTEN-COBALT OXIDE-BASED AND BISMUTH- TUNGSTEN-NIOBIUM OXIDE-BASED SOLID SOLUTIONS FOR OXIDE ION CONDUCTOR, AND METHOD FOR PRODUCING THE SAME

机译:基于铋-钨-钴氧化物和铋-钨-铌氧化物的固体溶液及其生产方法

摘要

PROBLEM TO BE SOLVED: To provide a bismuth-tungsten-cobalt oxide-based solid solution and bismuth-tungsten-niobium oxide-based solid solution, suitable as oxide ion conductors. SOLUTION: The bismuth-tungsten-cobalt oxide-based solid solution and the bismuth-tungsten-niobium oxide-based solid solution, for the oxide ion conductor have tetragonal crystal structures represented by the general formulas of Bi1-xWx-xyCoxyO1.5+1.5x-2xy (0.119=x=0.151, 0y=0.10), and Bi1-xWx-xzNbxzO1.5+1.5x-0.5xz (0.119=x=0.151, 0z=0.3) respectively.
机译:解决的问题:提供适合用作氧化物离子导体的基于铋-钨-钴氧化物的固溶体和基于铋-钨-铌氧化物的固溶体。解决方案:铋-钨-钴氧化物基固溶体和铋-钨-铌氧化物基固溶体,用于氧化物离子导体具有四方晶体结构,由Bi1-xWx-xyCoxyO1.5 + 1.5通式表示x-2xy(0.119 <= x <= 0.151,0

著录项

  • 公开/公告号JP2001199727A

    专利类型

  • 公开/公告日2001-07-24

    原文格式PDF

  • 申请/专利号JP20000006054

  • 发明设计人 WATANABE AKITERU;

    申请日2000-01-11

  • 分类号C01G51/00;C01G41/00;H01B1/08;H01M8/02;

  • 国家 JP

  • 入库时间 2022-08-22 01:31:03

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