首页> 外国专利> WAFER PROBER AND CERAMIC SUBSTRATE TO BE USED THEREFOR AND WAFER PROBER DEVICE

WAFER PROBER AND CERAMIC SUBSTRATE TO BE USED THEREFOR AND WAFER PROBER DEVICE

机译:晶圆专用和陶瓷基质可用于此和晶圆专用设备

摘要

PROBLEM TO BE SOLVED: To provide a ceramic substrate to be used for a wafer prober with excellent temperature ascending and descending characteristics for preventing generation of bending without shifting a silicon wafer even at the time of tightly sucking and fixing the placed silicon wafer and pressing it with a tester pin, and for preventing the damage to the wafer or measurement error. ;SOLUTION: A conductive layer 2 is formed on the surface of a ceramic substrate 3, and plural concentric circular grooves 7 are formed on the ceramic substrate 3, and through-holes 8 are formed at one pert of the grooves 7, and concentric circular heating elements 41 are arranged on the bottom face of the ceramic substrate 3 so that a ceramic substrate 3 to be used for a wafer prober 101 can be constituted.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种用于晶片探测器的陶瓷基板,该陶瓷基板具有优异的温度上升和下降特性,即使在紧紧吸住并固定放置的硅晶片并对其加压时,也可以防止弯曲而不会移动硅晶片。使用测试针,以防止损坏晶片或测量错误。 ;解决方案:在陶瓷基板3的表面上形成导电层2,并在陶瓷基板3上形成多个同心的圆形凹槽7,并且在凹槽7的一个角处形成通孔8,同心圆形加热元件41布置在陶瓷基板3的底面上,从而可以构成用于晶片探测器101的陶瓷基板3。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001135680A

    专利类型

  • 公开/公告日2001-05-18

    原文格式PDF

  • 申请/专利权人 IBIDEN CO LTD;

    申请/专利号JP20000248582

  • 发明设计人 HIRAMATSU YASUJI;ITO YASUTAKA;ITO ATSUSHI;

    申请日2000-08-18

  • 分类号H01L21/66;C04B41/88;G01R1/06;G01R31/26;G01R31/28;H01L21/68;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:55

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