首页> 外国专利> THIN FILM DEPOSITION DEVICE AND SHUNTING ARC DISCHARGE ELECTRODE DEVICE

THIN FILM DEPOSITION DEVICE AND SHUNTING ARC DISCHARGE ELECTRODE DEVICE

机译:薄膜沉积装置和圆弧放电电极装置

摘要

PROBLEM TO BE SOLVED: To remarkably increase the evaporating quantity and ion quantity and to improve the productivity by generating shunting arc discharge by an electrode of a wide area and evaporating and ionizing an electrode material. ;SOLUTION: In a thin film deposition device provided with at least one or more electrodes 3 generating shunting arc discharge in a treating vessel 2 and an arc power source 4 making an arc current for generating shunting arc to flow through the electrode 3, the electrode 3 is composed in such a manner that at least one or more electrically conductive introducing part 16 generating shunting arc discharge are connected to an electrically conductive electrode body 12 composed of an evaporated and ionized material, and the arc power source 4 is connected to the electrode 3 so as to feed an arc current to the electrode body 12 and the introducing part 16.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:通过大面积的电极产生分流电弧放电并使电极材料蒸发和电离,从而显着增加蒸发量和离子量并提高生产率。 ;解决方案:在一种薄膜沉积装置中,该薄膜沉积装置具有至少一个或多个在处理容器2中产生分流电弧放电的电极3和电弧电源4,该电弧电源4产生用于产生分流电弧的电弧电流流过电极3,该电极图3中的电路以这样的方式构成:将产生分流电弧放电的至少一个或多个导电引入部分16连接到由蒸发和电离的材料组成的导电电极体12,并且电弧电源4连接到电极。如图3所示,以将电弧电流馈送到电极体12和引入部分16。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001081555A

    专利类型

  • 公开/公告日2001-03-27

    原文格式PDF

  • 申请/专利权人 KOBE STEEL LTD;

    申请/专利号JP19990262393

  • 发明设计人 YUKIMURA KEN;KUMAKIRI TADASHI;

    申请日1999-09-16

  • 分类号C23C14/48;C23C14/54;H05H1/34;

  • 国家 JP

  • 入库时间 2022-08-22 01:30:46

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