SINGLE-ELECTRON TUNNEL TRANSISTOR USING LAMINATED STRUCTURE

摘要

PROBLEM TO BE SOLVED: To obtain a single-electron tunnel transistor whose working accuracy is high and which can use a laminated structure having a single-electron tunnel effect by a method wherein the laminated structure in which electric conduction layers and tunnel barrier layers are grown alternately, the number of layers is set at a specific value or higher, a very small tunnel junction having the order of a square at a specific value is provided and a control gate is provided.;SOLUTION: A single-electron tunnel transistor 10, electric conduction layers 11 and tunnel barrier layers 12 constitute a laminar single crystal. When the laminar single crystal is used, the specific requirement of a single-electron tunnel can be satisfied by increasing the number N of layers even when an area S and a temperature T are made large. Consequently, even when a very small electrode having a square of about 1 μm capable of being realized easily by a normal working technique is used, the requirement of the single-electron tunnel can be satisfied sufficiently when the number of layers is increased so as to be N50 or higher.;COPYRIGHT: (C)2001,JPO