Single-electron transistor and its manufacturing method using a Schottky barrier tunnel

摘要

PURPOSE: A single electron transistor is provided to improve a reproducibility and a uniformity by using a Schottky tunnel barrier which is naturally formed at a junction of a semiconductor and a metal. CONSTITUTION: A single electron transistor using a Schottky tunnel barrier comprises a semiconductor substrate, a source, a drain, an island, an insulation layer and a gate. The source(2) and the drain(3) are formed by doping a conductive impurity on the semiconductor substrate(1). The island(4) is formed by depositing a metal on the semiconductor substrate between the source and the drain, and forms a Schottky barrier at a boundary with the drain and at a boundary with the source, respectively. The insulation layer is formed on the island, and the gate is formed on the insulation layer.