首页> 外国专利> InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME

InAlGaN EMITTING LIGHT IN SHORT-WAVELENGTH REGION OF ULTRAVIOLET REGION, ITS MANUFACTURING METHOD AS WELL AS ULTRAVIOLET LIGHT-EMITTING ELEMENT USING THE SAME

机译:紫外区短波长区域中的InAlGaN发光,其制造方法以及使用相同方法的紫外发光元件

摘要

PROBLEM TO BE SOLVED: To emit light at room temperature and with high efficiency in a short-wavelength region as an ultraviolet region at a wavelength of 360 nm or shorter.;SOLUTION: The composition ratio of In is set at 2 to 20%. The composition ratio of Al is set at 10 to 90%, and the total of the composition ratios of In, Al and Ga is set so that it becomes 100%.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:在室温下以360nm或更短的波长在紫外区域的短波长区域中以高效率发光。解决方案:In的组成比设定为2至20%。 Al的组成比设定为10〜90%,In,Al和Ga的组成比的总和设定为100%。COPYRIGHT:(C)2001,JPO

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