PLASMA ENHANCED CVD SYSTEM AND PLASMA ENHANCED CVD FILM DEPOSITING METHOD

摘要

PROBLEM TO BE SOLVED: To improve operation efficiency of a plasma enhanced CVD system by suppressing deposition of a film on other surface than that of a substrate. ;SOLUTION: The plasma enhanced CVD system comprises a plasma generation chamber 101 and a treatment chamber 102 both of which are separated from each other, a reaction gas injection nozzle 21 with a plasma injection nozzle 13 which feeds the plasma 19 generated in the plasma generation chamber 101. The reaction gas 24 and the plasma 19 are fed to the treatment chamber 102. An opening of the reaction gas injection nozzle 21 is placed in the plasma 19 from the plasma injection nozzle 13, and the plasma generating gas 26 is fed in the chamber 101 to generate the plasma 19, which is fed in the treatment chamber 102 through the plasma introducing nozzle 13. The reaction gas 24 is fed from the gas injection nozzle 21, and a film is only deposited on the surface of a substrate 11 faced to the plasma injection nozzle 13 in the treatment chamber 102.;COPYRIGHT: (C)2001,JPO