PLASMA-ENHANCED FILM FORMING METHOD AND PLASMA- ENHANCED CVD APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a plasma-enhanced film forming method and a plasma- enhanced CVD apparatus which forms an oxide film, without causing reduction deterioration of device elements.;SOLUTION: The method comprises applying a high frequency power of 500 W or more per total mass flow rate of 100 SCCM of a material gas and an oxidative gas, setting a mass flow rate ratio of the oxidative gas to a material gas to 3 or more to 1 and setting the film forming temperature to a range of 100-300°C, thus forming an oxide film. For forming the oxide film, a protective (oxide) film of 500 Å or more is formed, without applying a bias, then an embedded film formation is conducted with an applied bias, and finally a high-speed film forming is conducted without bias. Oxidative gas feed nozzles are disposed above material gas feed nozzles and are located alternately in the circumferential direction of a film-forming chamber in a plan view.;COPYRIGHT: (C)2002,JPO