IMPURITY DIFFUSION METHOD IN SEMICONDUCTOR ELEMENT MANUFACTURING PROCESS, IMPURITY DIFFUSING DEVICE FOR USE THEREIN AND SEMICONDUCTOR ELEMENT MANUFACTURED THEREFROM

摘要

PROBLEM TO BE SOLVED: To obtain an impurity diffusion processing method in a semiconductor element manufacturing process which forms a uniform impurity diffusion layer and can carry on an impurity diffusion process high in performance and a yield, an impurity diffusing device for use in the same method, and a semiconductor element containing a solar cell, etc., high in a yield. ;SOLUTION: On an outermost side on a substrate surface side of a semiconductor element substrate of a plurality of rows which are stationed on a boat, a flow path plate for holding uniformly a gas flow path is installed. As this flow path plate, the plate manufactured with silicon is used. Incidentally, the boat may be made by combining a sub-boat with a main boat.;COPYRIGHT: (C)2001,JPO